Page 15 - 2024S

8 UEC Int’l Mini-Conference No.52

Figure 9: Overshoot suppression test circuit of
the GaN-based SSCB.

switch. In the presence of the RCD snubber,
the overshoot is significantly suppressed and the
high-frequency oscillations are eliminated, and
the switch is rapidly turned off, with the fault
current dropping quickly to a safe value. These
results show that proper application of buffer
circuits can improve the reliability and safety of
SSCBs. (a)

4 Conclusions

In order to reduce the high conduction loss prob-
lem caused by switching RON power dissipation
and to suppress the overshoot problem when
switching off, this paper reviews and compares
various SSCBs and investigates the simulation of
SSCBs using GaN FETs and fast single-channel
drivers and RCD snubbers.
GaN FETs with very low on-resistance and very
short turn-off times are used, which significantly
improves the efficiency of the SSCB and its
response to overshoot and short-circuit faults.
And responsiveness to overshoot and short- (b)
circuit faults. The use of GaN (GS61008P) ef-
fectively reduces the power consumption of the Figure 10: (a)VDS Without snubber. (b) VDS
SSCB system, reducing the RDS by 60% com- with Snubber’s CSN = 56000 pF.
pared to the previously mentioned SSCB.
The use of a single-channel fast driver
(UCC27519) effectively drives the GaN device
and improves reliability.