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(a)
(b)
Figure 11: (a)iL without snubber (b)iL with Snubber’s CSN = 56000 pF.
In addition, the design methodology of the RCD [3] D. Marroqu´ı, J. M. Blanes, A. Garrig´os, and
buffer circuit in a real circuit is given and circuit R. Guti´errez, “Self-powered 380 V DC SiC
simulations are performed. The results obtained solid-state circuit breaker and fault current
show that the RCD buffer has excellent perfor- limiter,” IEEE Trans. Power Electron., vol.
mance and utility in low voltage DC microgrids 34, no. 10, pp. 9600–9608, Oct. 2019.
and current rating ranges, as well as in the pro-
tection of emerging technologies in energy pro- [4] Y. Ren, “A single gate driver based solid-
duction, and is suitable for practical SSCB de- state circuit breaker using series connected
sign guidelines. SiC mosfets,” IEEE Trans. Power Electron.,
The reliability and efficiency of the SSCB is fur- vol. 34, no. 3, pp. 2002–2006, Mar. 2019
ther improved.
[5] A. Giannakis “Performance evaluation and
limitations of overvoltage suppression cir-
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